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 Product Specification
www.jmnic.com
Silicon Power Transistors
BU2722AF
DESCRIPTION With TO-3PFa package High voltage High speed switching APPLICATIONS For use in horizontal deflection circuits of high resolution monitors
PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 1700 825 7.5 10 25 10 14 45 150 -65~150 ae ae UNIT V V V A A A A W
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Emitter-base saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=100mA ;IB=0,L=25mH IE=1mA ;IC=0 IC=4.5A IB=1.0A IC=4.5A IB=1.0A VCB=BVCBO IE=0 TC=125ae VEB=7.5V; IC=0 IC=0.1A ; VCE=5V IC=4.5A ; VCE=1V 4.5 22 MIN 825 7.5 SYMBOL VCEO(SUS) VEBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2
BU2722AF
TYP.
MAX
UNIT V V
1.0 1.0 1.0 2.0 1.0
V V mA mA
10
JMnic
Product Specification
www.jmnic.com
Silicon Power Transistors
PACKAGE OUTLINE
BU2722AF
Fig.2 Outline dimensions (unindicated tolerance:A
0.30mm)
JMnic


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